features ? repetitive a valanche rating ? isolated and hermetically sealed ? low r ds(on) ? ease of paralleling ? ceramic feedthroughs ? qualified to mil-prf-19500 description this hermetically packaged qpl product features the latest advanced mosfet and packaging technology. i t i s ideally suited for military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. 3 . 1 - 1 4 11 r0 100v thru 500v, up to 34a, n-channel, mosfet power t ransistor, repetitive a valanche rated jantx, jantxv power mosfet in t o-254aa p ackage, qualified to mil-prf-19500/592 .144 dia. .050 .040 .260 .249 .685 .665 .800 .790 .545 .535 .550 .510 .045 .035 .550 .530 .150 typ. .150 typ. .005 mechanical outline schematic pin connection pin 1: drain pin 2: source pin 3: gate 123 primary electrical characteristics @ t c = 25 c part number v ds, v olts r ds(on) i d , amps 2n7224 100 .070 34 2N7225 200 .100 27.4 2n7227 400 .315 14 2n7228 500 .415 12 2n7224, jantx2n7224, jantxv2n7224 2n7227, jantx2n7227, jantxv2n7227 2N7225, jantx2N7225, jantxv2N7225 2n7228, jantx2n7228, jantxv2n7228
parameter min. typ. max. units test conditions bv dss drain-source 100 v v gs = 0 v , i d =1.0 ma, breakdown voltage r ds(on) static drain-to-source - - -- - - 0.07 v gs = 1 0 v , i d = 21 a 3 on-state resistance - - -- - - 0.081 v gs = 1 0 v , i d = 34 a 3 v gs(th) gate threshold voltage 2.0 - - - 4.0 v v ds = v gs , i d = 250 a i dss zero gate voltage drain - - -- - - 25 a v ds = 80 v, v gs = 0v current - - -- - - 250 v ds = 80 v, v gs = 0v, t j = 125 c i gss gate -to-source leakage forward - - -- - - 100 na v gs = 20 v i gss gate -to-source leakage reverse - - -- - - -100 n a v gs = -20 v q g(on) on-state gate charge - - -- - - 125 n c v gs = 1 0 v , i d = 34a q gs gate-to-source charge - - -- - -22ncv ds = 50 v q gd gate-to-drain (miller) charge - - -- - - 65 n c see note 4 t d(on) turn-on delay time - - -- - -35nsv dd = 5 0 v , i d = 21a, r g = 2.35 t r rise time - - -- - - 190 ns see note 4 t d ( o f f ) turn-off delay time - - -- - - 170 ns t r fall time - - -- - - 130 ns source-drain diode ratings and characteristics parameter min. typ. max. units test conditions v sd diode forward voltage - - -- - - 1.8 v t j = 25c, i s = 34a 3 , v gs = 0 v t t r r reverse recovery time - - -- - - 500 ns t j = 25c, i f = 34a, d i / d t< 100a/s thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case - - -- - - 0.83 mounting surface flat, r thcs case-to-sink - - - 0.21 - - - c/w smooth, and greased r thja junction-to-ambient - - -- - - 48 typical socket mount 1. repetitive rating: pulse width limited by maximum junction temperature. 2. @v dd = 25v, starting t j = 25 c , l > 200 h, r g = 25 , peak i l = 34a 3. pulse width < 300 s; duty cycle < 2% 4. see mil-s-19500/592 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 parameter jantxv, jantx, 2n7224 units i d @ v gs = 10v, t c = 25c continuous drain current 34 a i d @ v gs = 10v, t c = 100c continuous drain current 21 a i dm pulsed drain current 1 136 a p d @ t c = 25c maximum power dissipation 150 w linear derating factor 1.2 w/c v gs gate-source voltage 20 v e as single pulse avalanche energy 2 150 4 mj i ar avalanche current 1 34 4 a e ar repetitive avalanche energy 1 15 4 mj t j operating junction -55 to 150 c t stg storage temperature range lead temperature 300(.06 from case for 10 sec) c electrical characteristics @ t j = 25c (unless otherwise specified) absolute maximum ra tings ( t c = 25c unless otherwise noted 2n7224, jantx2n7224, jantxv2n7224 2n7227, jantx2n7227, jantxv2n7227 2N7225, jantx2N7225, jantxv2N7225 2n7228, jantx2n7228, jantxv2n7228
parameter min. typ. max. units test conditions bv dss drain-source 200 v v gs = 0 v , i d =1.0 ma, breakdown voltage r ds(on) static drain-to-source - - -- - - 0.100 v gs = 1 0 v , i d = 17 a 3 on-state resistance - - -- - - 0.105 v gs = 1 0 v , i d = 27.4 a 3 v gs(th) gate threshold voltage 2.0 - - - 4.0 v v ds = v gs , i d = 250 a i dss zero gate voltage drain - - -- - - 25 a v ds = 160 v, v gs = 0v current - - -- - - 250 v ds = 160 v, v gs = 0v, t j = 125 c i gss gate -to-source leakage forward - - -- - - 100 na v gs = 20 v i gss gate -to-source leakage reverse - - -- - - -100 n a v gs = -20 v q g(on) on-state gate charge - - -- - - 115 n c v gs = 1 0 v , i d = 27.4a q gs gate-to-source charge - - -- - -22ncv ds = 100 v q gd gate-to-drain (miller) charge - - -- - - 60 n c see note 4 t d(on) turn-on delay time - - -- - -35nsv dd = 100 v, i d = 17a, r g = 2.35 t r rise time - - -- - - 190 ns see note 4 t d ( o f f ) turn-off delay time - - -- - - 170 ns t r fall time - - -- - - 130 ns source-drain diode ratings and characteristics parameter min. typ. max. units test conditions v sd diode forward voltage - - -- - - 1.9 v t j = 25c, i s = 27.4a 3 , v gs = 0 v t t r r reverse recovery time - - -- - - 950 ns t j = 25c, i f = 27.4a, d i / d t< 100a/s thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case - - -- - - 0.83 mounting surface flat, r thcs case-to-sink - - - 0.21 - - - c/w smooth, and greased r thja junction-to-ambient - - -- - - 48 typical socket mount 1. repetitive rating: pulse width limited by maximum junction temperature. 2. @v dd = 50v, starting t j = 25 c , l > 1 mh, r g = 25 , peak i l = 27.4a 3. pulse width < 300 s; duty cycle < 2% 4. see mil-s-19500/592 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 parameter jantxv, jantx, 2N7225 units i d @ v gs = 10v, t c = 25c continuous drain current 27.4 a i d @ v gs = 10v, t c = 100c continuous drain current 17 a i dm pulsed drain current 1 110 a p d @ t c = 25c maximum power dissipation 150 w linear derating factor 1.2 w/c v gs gate-source voltage 20 v e as single pulse avalanche energy 2 500 4 mj i ar avalanche current 1 27.4 4 a e ar repetitive avalanche energy 1 15 4 mj t j operating junction -55 to 150 c t stg storage temperature range lead temperature 300(.06 from case for 10 sec) c electrical characteristics @ t j = 25c (unless otherwise specified) absolute maximum ra tings ( t c = 25c unless otherwise noted 2n7224, jantx2n7224, jantxv2n7224 2n7227, jantx2n7227, jantxv2n7227 2N7225, jantx2N7225, jantxv2N7225 2n7228, jantx2n7228, jantxv2n7228
parameter min. typ. max. units test conditions bv dss drain-source 400 v v gs = 0 v , i d =1.0 ma, breakdown voltage r ds(on) static drain-to-source - - -- - - 0.315 v gs = 1 0 v , i d = 9.0 a 3 on-state resistance - - -- - - 0.415 v gs = 1 0 v , i d = 14 a 3 v gs(th) gate threshold voltage 2.0 - - - 4.0 v v ds = v gs , i d = 250 a i dss zero gate voltage drain - - -- - - 25 a v ds = 320 v, v gs = 0v current - - -- - - 250 v ds = 320 v, v gs = 0v, t j = 125 c i gss gate -to-source leakage forward - - -- - - 100 na v gs = 20 v i gss gate -to-source leakage reverse - - -- - - -100 n a v gs = -20 v q g(on) on-state gate charge - - -- - - 110 n c v gs = 1 0 v , i d = 14a q gs gate-to-source charge - - -- - -18ncv ds = 200 v q gd gate-to-drain (miller) charge - - -- - - 65 n c see note 4 t d(on) turn-on delay time - - -- - -35nsv dd = 200 v, i d = 9 a, r g = 2.35 t r rise time - - -- - - 190 ns see note 4 t d ( o f f ) turn-off delay time - - -- - - 170 ns t r fall time - - -- - - 130 ns source-drain diode ratings and characteristics parameter min. typ. max. units test conditions v sd diode forward voltage - - -- - - 1.7 v t j = 25c, i s = 14a 3 , v gs = 0 v t t r r reverse recovery time - - -- - - 1200 ns t j = 25c, i f = 14a, d i / d t< 100a/s thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case - - -- - - 0.83 mounting surface flat, r thcs case-to-sink - - - 0.21 - - - c/w smooth, and greased r thja junction-to-ambient - - -- - - 48 typical socket mount 1. repetitive rating: pulse width limited by maximum junction temperature. 2. @v dd = 50v, starting t j = 25 c , l > 6 . 2 5 mh, r g = 25 , peak i l = 14a 3. pulse width < 300 s; duty cycle < 2% 4. see mil-s-19500/592 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 parameter jantxv, jantx, 2n7227 units i d @ v gs = 10v, t c = 25c continuous drain current 14 a i d @ v gs = 10v, t c = 100c continuous drain current 9.0 a i dm pulsed drain current 1 56 a p d @ t c = 25c maximum power dissipation 150 w linear derating factor 1.2 w/c v gs gate-source voltage 20 v e as single pulse avalanche energy 2 700 4 mj i ar avalanche current 1 14 4 a e ar repetitive avalanche energy 1 15 4 mj t j operating junction -55 to 150 c t stg storage temperature range lead temperature 300(.06 from case for 10 sec) c electrical characteristics @ t j = 25c (unless otherwise specified) absolute maximum ra tings ( t c = 25c unless otherwise noted 2n7224, jantx2n7224, jantxv2n7224 2n7227, jantx2n7227, jantxv2n7227 2N7225, jantx2N7225, jantxv2N7225 2n7228, jantx2n7228, jantxv2n7228
parameter min. typ. max. units test conditions bv dss drain-source 500 v v gs = 0 v , i d =1.0 ma, breakdown voltage r ds(on) static drain-to-source - - -- - - 0.415 v gs = 1 0 v , i d = 8.0 a 3 on-state resistance - - -- - - 0.515 v gs = 1 0 v , i d = 12 a 3 v gs(th) gate threshold voltage 2.0 - - - 4.0 v v ds = v gs , i d = 250 a i dss zero gate voltage drain - - -- - - 25 a v ds = 400 v, v gs = 0v current - - -- - - 250 v ds = 400 v, v gs = 0v, t j = 125 c i gss gate -to-source leakage forward - - -- - - 100 na v gs = 20 v i gss gate -to-source leakage reverse - - -- - - -100 n a v gs = -20 v q g(on) on-state gate charge - - -- - - 120 n c v gs = 1 0 v , i d = 12a q gs gate-to-source charge - - -- - -19ncv ds = 250 v q gd gate-to-drain (miller) charge - - -- - - 70 n c see note 4 t d(on) turn-on delay time - - -- - -35nsv dd = 250 v, i d = 8a, r g = 2.35 t r rise time - - -- - - 190 ns see note 4 t d ( o f f ) turn-off delay time - - -- - - 170 ns t r fall time - - -- - - 130 ns source-drain diode ratings and characteristics parameter min. typ. max. units test conditions v sd diode forward voltage - - -- - - 1.7 v t j = 25c, i s = 12a 3 , v gs = 0 v t t r r reverse recovery time - - -- - - 1600 ns t j = 25c, i f = 12a, d i / d t< 100a/s thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case - - -- - - 0.83 mounting surface flat, r thcs case-to-sink - - - 0.21 - - - c/w smooth, and greased r thja junction-to-ambient - - -- - - 48 typical socket mount 1. repetitive rating: pulse width limited by maximum junction temperature. 2. @v dd = 50v, starting t j = 25 c , l > 9 . 4 mh, r g = 25 , peak i l = 12a 3. pulse width < 300 s; duty cycle < 2% 4. see mil-s-19500/592 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 parameter jantxv, jantx, 2n7228 units i d @ v gs = 10v, t c = 25c continuous drain current 12 a i d @ v gs = 10v, t c = 100c continuous drain current 8.0 a i dm pulsed drain current 1 48 a p d @ t c = 25c maximum power dissipation 150 w linear derating factor 1.2 w/c v gs gate-source voltage 20 v e as single pulse avalanche energy 2 750 4 mj i ar avalanche current 1 12 4 a e ar repetitive avalanche energy 1 15 4 mj t j operating junction -55 to 150 c t stg storage temperature range lead temperature 300(.06 from case for 10 sec) c electrical characteristics @ t j = 25c (unless otherwise specified) absolute maximum ra tings ( t c = 25c unless otherwise noted 2n7224, jantx2n7224, jantxv2n7224 2n7227, jantx2n7227, jantxv2n7227 2N7225, jantx2N7225, jantxv2N7225 2n7228, jantx2n7228, jantxv2n7228
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